For the high and low pressure application of advanced power technology and multiple package options and innovative wafer bonding technology explains that innovation meaning law semiconductor power transistor field. Our products include -500~1500V MOSFET, the rated temperature (200 ° C) the highest silicon carbide (SiC) MOSFET, the breakdown voltage is in the range of 350~1300V IGBT and a lot of power bipolar transistor.