Compared with the Si semiconductor, SiC power components can be further miniaturized, low power consumption and high efficiency. It has excellent working characteristics under the environment of high temperature, and lower switching losses, as a new generation of low loss components, the highly anticipated.
BSM180D12P2C101Half bridge module consisting of ROHM SiC-DMOSFETs. |
Because the Total Capacitive Charge (Qc) small, can reduce the switch loss, high speed switch. Moreover, Si fast recovery diode TRR will increase with thetemperature rising, while SiC can maintain certain characteristics in.
When the switch current differential amplification principle is not, so the high speedoperation, switch loss. Small size chip of low on resistance, so the realization of low volume, low gate consumption. Si products with the rise of temperature on resistance increased more than 2 times, the on resistance of the SiC rise small,compact and energy saving can realize the 。
The power semiconductor element built-in are composed of SiC, and Si (silicon)compared to the IGBT module of material, can greatly reduce the switching loss.Built in SiC-SBD, SiC-MOSFET, compared with the traditional Si-IGBT, the high frequency in 100KHz over the next possible.
