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  • Address: Tangxia Town, Dongguan City, 101 Avenue
  • Contact person: Mr.Wen
  • Phone:13632396789
  • The main:Provide all kinds of active devices, passive components and electrical components and other electronic components

瑞萨电子IGBTNew series


  Renesas electronics published 2 new IGBT tube, including RJH60D7B and 600V37A 600V50A RJH60D5B. The new IGBT will be converted to DC system of power semiconductor device for alternating current, which is applicable for power electric welding machine, UPS, inverter, solar generator regulator (power converter) with high voltage and large current device. A new generation of technology to strengthen the thin wafer process based, balanced transmission, switching losses and stable performance and low loss, and improve the ability to withstand short circuit.


The main function of the new IGBT:

Increasing the working frequency of D5B/D7B, the highest working frequency can reach 50KHZ, compared with the early F5/F7 30KHZ increased by 60%. If the original IGBT single tube and the low frequency transformer as the driving scheme, if high frequency IGBT, has two advantages:
1 the transformer core by ultra crystallite into ferrite material, which can save the cost of
a lot 2 increase in switching frequency, efficiency is also the future development trend;
3 the price actually with existing with the specifications of IR, ST, FC, Infineon and so on are even cheaper than.



  In recent years, in consideration of environmental protection and other factors, to increase electronic equipment needs high energy efficiency, and continue to promote clean energy sources like solar and wind power generation equipment, the high voltage and large current continues to increase its energy efficiency, such as air conditioning compressor current solar inverter, inverter, high power motor drive plate. In order to reduce the equipment straight, AC conversion loss, high performance IGBT product demand and increase. However, this must be weighed against its saturation voltage, this parameter is critical to reach a low loss and high short circuit current tolerance in the high current operation. The past does not have both low loss and up to about 10 microseconds ability to withstand short circuit, is generally believed that it is indispensable to the motor drive applications, to meet this demand, Renesas developed the high performance IGBT.

For the IGBT inverter

The selection of parameters table
Selection Guide:
  • IC/ general purpose transistor / thyristors / manual selection of bidirectional thyristor 32768KB
  • RenesasElectronic analog & type manual power device 2582KB
Model Package The rated parameters Characteristic
VCES (V) IC (A) VCE(sat) (V) typ tf (μs) typ
RJH60D0DPK
TO-3P/MP-88
600
45
2.2
0.07
RJH60D5BDPQ
TO-247
600
75
1.6
0.05
RJH60D7BDPQ
TO-247
600
90
1.6
0.05
RJH60F5DPQ-A0
TO-3PSG
600
80
1.8
0.085
RJH60F7DPQ-A0
TO-3PSG
600
90
1.75
0.074

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