Since the IGBT module MOSFET structure, the IGBT gate electrode electrically isolated by an oxide film and emission. Since this oxide film is thin, the breakdown voltage is generally reaches 20 ~ 30V. Thus gate breakdown due to static electricity is a common cause IGBT failure. Therefore, use should note the following:
1. When using the module, try not to touch the drive terminal portion, when it is necessary to touch the terminals of the module, the first electrostatic body or clothes with a high resistance to ground discharge, and touch;
2. In connection with a conductive material module drive terminal before the wiring is not connected, please do not connect the module;
3. Try to operate in the case of the floor well grounded.
Although sometimes in the application to ensure that the gate drive voltage does not exceed the maximum rated voltage of the gate, but the parasitic inductance and capacitance coupling between the gate and the collector and the gate wiring, so that the oxide layer will produce an oscillating voltage damage. Typically, this twisted pair to transmit the drive signal to reduce the parasitic inductance. Small resistance in series with the gate wiring can be suppressed oscillating voltage.
In addition, the gate - emitter open circuit, if the voltage is applied between the electrode collector and the emitter, the collector potential varies, since leakage current flows through the collector, the gate potential rises, the collector then a current flows. At this time, if the collector and emitter between the presence of high voltage, it is possible to heat up the IGBT damage.
IGBT is used in the case, when the gate circuit is not normal or damaged when the gate circuit (the gate in the open state), if the main circuit voltage is applied, the IGBT will be damaged, to prevent such a failure, the gate should be pole between a series and emitter resistor of about 10KΩ.
When you install or replace IGBT module, we should attach great importance to the status of the contact surfaces and the tightening of the IGBT module and the heat sink. In order to reduce the contact resistance, it is best applied thermal grease between the heat sink and the IGBT module. Usually the bottom of the heat sink equipped with a fan, when the cooling fan damage in adverse heat sink cooling when heat will cause the IGBT module, and failure. So the cooling fan should be checked regularly, usually close to the heat sink to the IGBT module mounted temperature sensors, alarm when the temperature is too high or stop IGBT module.
1. General Save IGBT module places should be kept at room temperature and normal humidity condition, should not deviate too much. Predetermined ambient temperature is 5 ~ 35 ℃, humidity is defined in about 45 to 75%. In a particularly dry winter areas required humidifier humidification;
2. Try to stay away from corrosive gases or dust more occasions;
3. drastic temperature changes occur in places IGBT module surface may have dew condensation phenomenon, and therefore should be placed in the IGBT module temperature changes smaller place;
4. custody shall be careful not to place heavy objects on the IGBT module;
5. Replace the IGBT module container, the container should be used without static electricity.
6. The approach detection IGBT module.